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EPC2022

EPC2022

EPC2022

EPC

GAN TRANS 100V 3MOHM BUMPED DIE

SOT-23

EPC2022 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 50V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 60A
Input Capacitance 1.5nF
Rds On Max 3.2 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $4.77400 $2387
1,000 $4.31200 $4.312

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