SUM110P06-07L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website
SOT-23
SUM110P06-07L-E3 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
1.946308g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
6.9MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.75W Ta 375W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.75W
Turn On Delay Time
20 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
345nC @ 10V
Rise Time
160ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
240 ns
Turn-Off Delay Time
110 ns
Continuous Drain Current (ID)
-11A
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
240A
Max Junction Temperature (Tj)
175°C
Nominal Vgs
-3 V
Height
5.08mm
Length
10.41mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.97750
$1582
SUM110P06-07L-E3 Product Details
SUM110P06-07L-E3 Description
IRFR3708TRPBF developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.