1N1190

new-10%

Manufacturer part number:1N1190

Manufacturer:GeneSiC Semiconductor

Description:DIODE GEN PURP 600V 35A DO5

Case Package:SOT-23

Datasheet:1N1190 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	PRODUCTION (Last Updated: 6 months ago)
Mount	Chassis, Stud
Mounting Type	Chassis, Stud Mount
Package / Case	DO-203AB, DO-5, Stud
Diode Element Material	SILICON
Packaging	Bulk
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	1
Terminal Position	UPPER
Terminal Form	SOLDER LUG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	1N1190
JESD-30 Code	O-MUPM-D1
Operating Temperature (Max)	190°C
Number of Elements	1
Configuration	SINGLE
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 50V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 35A
Case Connection	CATHODE
Forward Current	35A
Operating Temperature - Junction	-65°C~190°C
Max Surge Current	595A
Application	GENERAL PURPOSE
Max Reverse Voltage (DC)	600V
Average Rectified Current	35A
Number of Phases	1
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	600V
Reverse Voltage	600V
RoHS Status	RoHS Compliant