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2N7636-GA

2N7636-GA

2N7636-GA

GeneSiC Semiconductor

Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C

SOT-23

2N7636-GA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-276AA
Number of Pins 3
Operating Temperature -55°C~225°C TJ
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology SiC (Silicon Carbide Junction Transistor)
Power Dissipation-Max 125W Tc
Rds On (Max) @ Id, Vgs 415m Ω @ 4A
Input Capacitance (Ciss) (Max) @ Vds 324pF @ 35V
Current - Continuous Drain (Id) @ 25°C 4A Tc 165°C
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 4A
RoHS Status Non-RoHS Compliant

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