IRC830PBF

new-10%

Manufacturer part number:IRC830PBF

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 500V 4.5A 5-Pin(5+Tab) TO-220

Case Package:SOT-23

Datasheet:IRC830PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5
Weight	3.000003g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
JESD-30 Code	R-PSFM-T5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Number of Channels	1
Power Dissipation-Max	74W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	280 mJ
FET Feature	Current Sensing
Height	9.02mm
Length	10.67mm
Width	4.83mm
RoHS Status	ROHS3 Compliant