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MBR12030CT

  • MBR12030CT
  • MBR12030CT

MBR12030CT

MBR12030CT

GeneSiC Semiconductor

MBR12030CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBR12030CT Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination Solder
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Pitch 2mm
Terminal Position UPPER
Orientation Right Angle
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 5
Number of Elements 2
Contact Resistance 20mOhm
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 20V
Voltage - Forward (Vf) (Max) @ If 650mV @ 60A
Forward Current 60A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Application POWER
Current - Average Rectified (Io) 120A DC
Forward Voltage 650mV
Max Reverse Voltage (DC) 30V
Average Rectified Current 120A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 30V
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 800A
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
25 $65.65840 $1641.46
MBR12030CT Product Details

MBR12030CT Overview


The device operates when the forward voltage is set to 650mV.Surge currents should be monitored and prevented from exceeding 800A.This device will operate when the forward voltage is set to 60A.Devices like this one are powered with a reverse voltage peak of 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.

MBR12030CT Features


650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A

MBR12030CT Applications


There are a lot of GeneSiC Semiconductor MBR12030CT applications of rectifier diode array.

  • Battery chargers
  • General Rectification
  • Free wheeling diode in low voltage converters
  • Rectifiers for UBS
  • Crowbar applications
  • Rectifier for drives applications
  • Rectifiers in switch mode power supplies (SMPS)

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