MBR12040CT datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MBR12040CT Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 120A
Forward Current
120A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
60A
Application
POWER
Current - Average Rectified (Io)
120A DC
Max Reverse Voltage (DC)
40V
Average Rectified Current
120A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
40V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$65.65840
$1641.46
MBR12040CT Product Details
MBR12040CT Overview
There is a maximum output voltage of 60A.Monarrayoring the surge current and preventing array from exceeding 800A should be the rule.The device operates when the forward voltage is set to 120A.A reverse voltage peak of 1A is used to power devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR12040CT Features
a maximum output voltage of 60A a peak voltage of 1A a reverse voltage peak of 1A
MBR12040CT Applications
There are a lot of GeneSiC Semiconductor MBR12040CT applications of rectifier diode array.