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MBRF120100R

MBRF120100R

MBRF120100R

GeneSiC Semiconductor

MBRF120100R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRF120100R Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case TO-244AB
Diode Element Material SILICON
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 100V
Voltage - Forward (Vf) (Max) @ If 840mV @ 60A
Forward Current 120A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 100V
Average Rectified Current 60A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
MBRF120100R Product Details

MBRF120100R Overview


In the case of 120A forward voltage, the device will operate.A reverse voltage peak of 1A is used to power devices like this one.

MBRF120100R Features


a peak voltage of 1A
a reverse voltage peak of 1A

MBRF120100R Applications


There are a lot of GeneSiC Semiconductor MBRF120100R applications of rectifier diode array.

  • Rectifier for drives applications
  • Rectifiers for UBS
  • General Rectification
  • Battery chargers
  • Crowbar applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters

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