MURF20040R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MURF20040R Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
TO-244AB
Diode Element Material
SILICON
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Operating Temperature (Max)
150°C
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.3V @ 100A
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
800A
Output Current-Max
100A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
400V
Average Rectified Current
200A
Number of Phases
1
Reverse Recovery Time
90 ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
2000A
Reverse Voltage
400V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
MURF20040R Product Details
MURF20040R Overview
The maximum output voltage can be set to 100A.Keeping the surge current under 800A and preventing it from exceeding it should be the rule.This device is powered with reverse voltage peak of 25μA V.
MURF20040R Features
a maximum output voltage of 100A a peak voltage of 25μA a reverse voltage peak of 25μA
MURF20040R Applications
There are a lot of GeneSiC Semiconductor MURF20040R applications of rectifier diode array.