MURT10010R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website
SOT-23
MURT10010R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Three Tower
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X3
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-55°C
Number of Elements
2
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.3V @ 50A
Case Connection
ISOLATED
Max Surge Current
400A
Output Current-Max
50A
Application
SUPER FAST RECOVERY
Current - Average Rectified (Io)
100A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
100A
Number of Phases
1
Reverse Recovery Time
75 ns
Peak Reverse Current
25μA
Non-rep Pk Forward Current-Max
1500A
Reverse Voltage
100V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$87.53920
$2188.48
MURT10010R Product Details
MURT10010R Overview
50A is the maximum output voltage array can support.Surge currents should be monitored and prevented from exceeding 400A.Typical devices like this one are powered by reverse voltage peaks of 25μA.
MURT10010R Features
a maximum output voltage of 50A a peak voltage of 25μA a reverse voltage peak of 25μA
MURT10010R Applications
There are a lot of GeneSiC Semiconductor MURT10010R applications of rectifier diode array.