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HGTG27N60C3R

HGTG27N60C3R

HGTG27N60C3R

HARRIS SEMICONDUCTOR

HGTG27N60C3R datasheet pdf and Unclassified product details from HARRIS SEMICONDUCTOR stock available on our website

SOT-23

HGTG27N60C3R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Rise Time-Max 30ns
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247
Power Dissipation-Max (Abs) 208W
Turn On Time 38 ns
Collector Current-Max (IC) 54A
Turn Off Time-Nom (toff) 250 ns
Collector-Emitter Voltage-Max 600V
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Fall Time-Max (tf) 400ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.90000 $2.9
500 $2.871 $1435.5
1000 $2.842 $2842
1500 $2.813 $4219.5
2000 $2.784 $5568
2500 $2.755 $6887.5

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