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IRLML5203GTRPBF

IRLML5203GTRPBF

IRLML5203GTRPBF

Infineon

-30V TO-236-3

SOT-23

IRLML5203GTRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-236-3
Number of Pins 3
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 98MOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.25W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 12 ns
Voltage - Threshold -2.5V
Transistor Application SWITCHING
Rise Time 8.2ns
Drain to Source Voltage (Vdss) -30V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 16 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) -3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 24A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 98mOhm
Rds On Max 98 mΩ
Capacitance - Input 510pF
Height 1.12mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.172828 $0.172828
10 $0.163046 $1.63046
100 $0.153816 $15.3816
500 $0.145110 $72.555
1000 $0.136896 $136.896
IRLML5203GTRPBF Product Details

IRLML5203GTRPBF Overview


This device conducts a continuous drain current (ID) of -3A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 24A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 98mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of -30V.

IRLML5203GTRPBF Features


a continuous drain current (ID) of -3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 98mOhm
a -30V drain to source voltage (Vdss)


IRLML5203GTRPBF Applications


There are a lot of Infineon
IRLML5203GTRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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