IRLML5203GTRPBF Overview
This device conducts a continuous drain current (ID) of -3A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 24A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 98mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of -30V.
IRLML5203GTRPBF Features
a continuous drain current (ID) of -3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 88 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 98mOhm
a -30V drain to source voltage (Vdss)
IRLML5203GTRPBF Applications
There are a lot of Infineon
IRLML5203GTRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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