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BSZ0901NS

BSZ0901NS

BSZ0901NS

Infineon Technologies AG

SOT-23

BSZ0901NS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code icon-pbfree no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0026Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
BSZ0901NS Product Details

BSZ0901NS Description


BSZ0901NS is a 30v OptiMOS? Power-MOSFET. Ultra-low gate and output charge, together with the lowest on-state resistance in small footprint packages, make OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET BSZ0901NS is in the TSDSON-8 package with 69W power dissipation.



BSZ0901NS Features


  • Optimized for high-performance Buck converter (Server, VGA)

  • Very Low FOMQOSS for High-Frequency SMPS

  • Low FOMSW for High-Frequency SMPS

  • Excellent gate charge xRDS(on) product(FOM)

  • Very low on-resistance RDS(on) @VGS=4.5V

  • 100% avalanche tested

  • Superior thermal resistance

  • N-channel

  • Qualified according to JEDEC1) for target applications



BSZ0901NS Applications


  • Onboard charger

  • Notebook

  • Mainboard

  • DC-DC

  • VRD/VRM

  • Motor control

  • LED


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