IRLML6401GTRPBF Overview

The drain current is the maximum continuous current the device can conduct, and this device has -4.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -12V, and this device has a drainage-to-source breakdown voltage of -12VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 250 ns.This device has a drain-to-source resistance of 50mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.For this transistor to work, a voltage -12V is required between drain and source (Vdss).

IRLML6401GTRPBF Features

a continuous drain current (ID) of -4.3A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 250 ns
single MOSFETs transistor is 50mOhm
a -12V drain to source voltage (Vdss)

IRLML6401GTRPBF Applications

There are a lot of Infineon
IRLML6401GTRPBF applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies