Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	231W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	231W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0024Ohm
Drain to Source Breakdown Voltage	30V
Nominal Vgs	2 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF2903ZS

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