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BSC152N10NSFGATMA1

BSC152N10NSFGATMA1

BSC152N10NSFGATMA1

Infineon Technologies

Trans MOSFET N-CH 100V 9.4A 8-Pin TDSON EP

SOT-23

BSC152N10NSFGATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 114W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 72μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 63A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 24ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 252A
Radiation Hardening No
RoHS Status RoHS Compliant

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