Name: AUIRF3305
Brand: Infineon Technologies
SKU: AUIRF3305
Price: 6.54000 USD
Availability: InStock

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AUIRF3305

Manufacturer part number:AUIRF3305

Manufacturer:Infineon Technologies

Description:AUIRF3305 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF3305 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	140A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	88ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	140A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	560A
Avalanche Energy Rating (Eas)	860 mJ
Height	16.51mm
Length	10.66mm
Width	4.72mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF3305 Product Details

AUIRF3305 Description

The AUIRF3305 is a single N-channel HEXFET? Power MOSFET with reduced ON-resistance per silicon area thanks to cutting-edge manufacturing processes. This advantage, when paired with the quick switching speed and ruggedized architecture, results in highly efficient and reliable functioning.