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IPD50N12S3L15ATMA1

IPD50N12S3L15ATMA1

IPD50N12S3L15ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

SOT-23

IPD50N12S3L15ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 120V
Avalanche Energy Rating (Eas) 330 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.77354 $1.54708

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