AUIRF7207Q

new-10%

Manufacturer part number:AUIRF7207Q

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 5.4A 8SOIC

Case Package:SOT-23

Datasheet:AUIRF7207Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	780pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.4A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	5.4A
Drain-source On Resistance-Max	0.06Ohm
Pulsed Drain Current-Max (IDM)	43A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	140 mJ
RoHS Status	RoHS Compliant