SIR838DP-T1-GE3

new-10%

Manufacturer part number:SIR838DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 150V 35A PPAK SO-8

Case Package:SOT-23

Datasheet:SIR838DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	5.4W Ta 96W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.4W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2075pF @ 75V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.033Ohm
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	45 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant