AUIRF7737L2TR

new-10%

Manufacturer part number:AUIRF7737L2TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 315A DIRECTFET

Case Package:SOT-23

Datasheet:AUIRF7737L2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L6
Number of Pins	13
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N7
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.9m Ω @ 94A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	5469pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Ta 156A Tc
Gate Charge (Qg) (Max) @ Vgs	134nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	624A
Avalanche Energy Rating (Eas)	386 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free