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DMP21D2UFA-7B

DMP21D2UFA-7B

DMP21D2UFA-7B

Diodes Incorporated

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 1 Ω @ 200mA, 4.5V ±8V 49pF @ 15V 0.8nC @ 4.5V 20V 3-XFDFN

SOT-23

DMP21D2UFA-7B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Capacitance 49pF
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-N2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 49pF @ 15V
Current - Continuous Drain (Id) @ 25°C 330mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Rise Time 37.3ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 163 ns
Turn-Off Delay Time 330 ns
Continuous Drain Current (ID) 330mA
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage -20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.055764 $0.055764
500 $0.041003 $20.5015
1000 $0.034169 $34.169
2000 $0.031347 $62.694
5000 $0.029297 $146.485
10000 $0.027253 $272.53
15000 $0.026357 $395.355
50000 $0.025916 $1295.8
DMP21D2UFA-7B Product Details

DMP21D2UFA-7B Overview


A device's maximal input capacitance is 49pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 330mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 330 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).

DMP21D2UFA-7B Features


a continuous drain current (ID) of 330mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 330 ns
a 20V drain to source voltage (Vdss)


DMP21D2UFA-7B Applications


There are a lot of Diodes Incorporated
DMP21D2UFA-7B applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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