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AUIRF9540N

AUIRF9540N

AUIRF9540N

Infineon Technologies

AUIRF9540N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRF9540N Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 117m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Rise Time 67ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) -23A
Threshold Voltage -2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 76A
Height 16.51mm
Length 10.66mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
AUIRF9540N Product Details

AUIRF9540N Description


This cellular architecture of HEXFET? Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.



AUIRF9540N Features


  • Fast Switching

  • Fully Avalanche Rated

  • Dynamic dV/dT Rating

  • Automotive Qualified*

  • Lead-Free, RoHS Compliant

  • Advanced Planar Technology

  • 175°C Operating Temperature

  • Repetitive Avalanche Allowed up to Tjmax

 


AUIRF9540N Applications


  • Automotive


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