Name: AUIRFB8407
Brand: Infineon Technologies
SKU: AUIRFB8407
Price: 2.68000 USD
Availability: InStock

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AUIRFB8407

Manufacturer part number:AUIRFB8407

Manufacturer:Infineon Technologies

Description:AUIRFB8407 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFB8407 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Power Dissipation	230W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	53 ns
Turn-Off Delay Time	78 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Nominal Vgs	3 V
Height	9.02mm
Length	10.67mm
Width	3.43mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AUIRFB8407 Product Details

AUIRFB8407 Description

Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these features makes the design a very efficient and reliable device for automotive and various other applications.