AUIRFB8407 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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AUIRFB8407 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Power Dissipation
230W
Turn On Delay Time
19 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
225nC @ 10V
Rise Time
70ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
53 ns
Turn-Off Delay Time
78 ns
Continuous Drain Current (ID)
195A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Nominal Vgs
3 V
Height
9.02mm
Length
10.67mm
Width
3.43mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$1.78101
$1.78101
AUIRFB8407 Product Details
AUIRFB8407 Description
Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these features makes the design a very efficient and reliable device for automotive and various other applications.