IPW60R080P7XKSA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 118 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2180pF @ 400V.A maximum pulsed drain current of 110A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPW60R080P7XKSA1 Features

the avalanche energy rating (Eas) is 118 mJ
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)

IPW60R080P7XKSA1 Applications

There are a lot of Infineon Technologies
IPW60R080P7XKSA1 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit