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AUIRFL014N

AUIRFL014N

AUIRFL014N

Infineon Technologies

MOSFET N-CH 55V 1.5A SOT-223

SOT-23

AUIRFL014N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 1.9A
Drain-source On Resistance-Max 0.16Ohm
Pulsed Drain Current-Max (IDM) 15A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 48 mJ
RoHS Status RoHS Compliant

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