IPD60R950C6

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IPD60R950C6

Manufacturer part number:IPD60R950C6

Manufacturer:Infineon Technologies

Description:IPD60R950C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD60R950C6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	37W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 100V
Current - Continuous Drain (Id) @ 25°C	4.4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	4.4A
Drain-source On Resistance-Max	0.95Ohm
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	46 mJ
RoHS Status	ROHS3 Compliant