AUIRFR3806

new-10%

Manufacturer part number:AUIRFR3806

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 43A DPAK

Case Package:SOT-23

Datasheet:AUIRFR3806 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	71W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	71W
Case Connection	DRAIN
Turn On Delay Time	6.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 50V
Current - Continuous Drain (Id) @ 25°C	43A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	47 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	43A
Threshold Voltage	2V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free