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AUIRFR4620TRL

AUIRFR4620TRL

AUIRFR4620TRL

Infineon Technologies

AUIRFR4620TRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRFR4620TRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 144W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.078Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 113 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.11687 $3.35061
AUIRFR4620TRL Product Details

AUIRFR4620TRL Description

The AUIRFR4620TRL HEXFET? Power MOSFET is specifically designed for automotive applications, using the latest processing techniques to achieve extremely low on-resistance per silicon area. The design has additional features, including a junction operating temperature of 175??C, a fast switching speed, and an enhanced repetitive avalanche rating. The AUIRFR4620TRL offers a variety of features that make this design extremely efficient and reliable for use in automotive applications as well as a wide variety of other applications.


AUIRFR4620TRL Features

  • Fast Switching

  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • Dynamic dV/dT Rating

  • 175??C Operating Temperature

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free, RoHS Compliant

  • Automotive Qualified * 


AUIRFR4620TRL Applications

  • Well suitable for tv and home appliance equipment

  • Small load switch transistor with high gain and low saturation voltage

  • Amplifier modules like Audio amplifiers, signal amplifiers, etc...

  • Driver modules like relay driver led driver, etc...


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