IPB120N04S4L02ATMA1

new-10%

Manufacturer part number:IPB120N04S4L02ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO263-3

Case Package:SOT-23

Datasheet:IPB120N04S4L02ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	158W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 110μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	14560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Continuous Drain Current (ID)	120A
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0017Ohm
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	480 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead