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AUIRFR5305TR

  • AUIRFR5305TR
  • AUIRFR5305TR

AUIRFR5305TR

AUIRFR5305TR

Infineon Technologies

Advanced Planar TechnologyLow On-ResistanceDynamic dv/dt Rating175C Operating TemperatureFast SwitchingFully Avalanche RatedRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS CompliantAutomotive

SOT-23

AUIRFR5305TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 110W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Fall Time (Typ) 63 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 31A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 280 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.41000 $3.41
500 $3.3759 $1687.95
1000 $3.3418 $3341.8
1500 $3.3077 $4961.55
2000 $3.2736 $6547.2
2500 $3.2395 $8098.75

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