IRFB3006GPBF

new-10%

Manufacturer part number:IRFB3006GPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 195A TO220AB

Case Package:SOT-23

Datasheet:IRFB3006GPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 170A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8970pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	182ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	189 ns
Turn-Off Delay Time	118 ns
Continuous Drain Current (ID)	270mA
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	195A
Drain-source On Resistance-Max	0.0025Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	1080A
Height	16.51mm
Length	10.668mm
Width	4.826mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free