AUIRFZ44N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
AUIRFZ44N Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount, Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
94W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
7.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C
49A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
69ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
49A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Height
16.51mm
Length
10.66mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.38000
$2.38
10
$2.14900
$21.49
100
$1.72660
$172.66
500
$1.34288
$671.44
1,000
$1.11267
$1.11267
AUIRFZ44N Product Details
AUIRFZ44N Description
This cellular design of AUIRFZ44N HEXFET Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge processing techniques to achieve low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.