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AUIRFZ44N

AUIRFZ44N

AUIRFZ44N

Infineon Technologies

AUIRFZ44N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRFZ44N Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 94W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 69ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 16.51mm
Length 10.66mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.38000 $2.38
10 $2.14900 $21.49
100 $1.72660 $172.66
500 $1.34288 $671.44
1,000 $1.11267 $1.11267
AUIRFZ44N Product Details

AUIRFZ44N Description


This cellular design of AUIRFZ44N HEXFET Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge processing techniques to achieve low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.



AUIRFZ44N Features


  • Isolated Package

  • Low On-Resistance

  • Fully Avalanche Rated

  • Automotive Qualified

  • Lead-Free, RoHS Compliant

  • Advanced Planar Technology

  • 175°C Operating Temperature

  • High Voltage Isolation = 2.5KVRMS

  • Sink to Lead Creepage Distance = 4.8mm



AUIRFZ44N Applications


  • Industrial

  • Personal electronics

  • Communications equipment


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