AUIRGS4062D1TRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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AUIRGS4062D1TRL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRGS4062DPBF
Rise Time-Max
41ns
Input Type
Standard
Power - Max
246W
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
102ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
59A
Power Dissipation-Max (Abs)
246W
Test Condition
400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.77V @ 15V, 24A
IGBT Type
Trench
Gate Charge
77nC
Current - Collector Pulsed (Icm)
72A
Td (on/off) @ 25°C
19ns/90ns
Switching Energy
532μJ (on), 311μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
40ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$4.47254
$3578.032
AUIRGS4062D1TRL Product Details
AUIRGS4062D1TRL Description
AUIRGS4062D1TRL is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance for increased reliability. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of switching frequencies.