SIGC81T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC81T60SNCX1SA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2005
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
10
JESD-30 Code
S-XUUC-N10
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
115 ns
Test Condition
400V, 100A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 100A
Turn Off Time-Nom (toff)
540 ns
IGBT Type
NPT
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
65ns/450ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC81T60SNCX1SA1 Product Details
SIGC81T60SNCX1SA1 Description
SIGC81T60SNCX1SA1 is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of SIGC81T60SNCX1SA1 is -55°C~150°C TJ and its Drain to Source Voltage (Vdss) is 600V. SIGC81T60SNCX1SA1 has 3 pins and it is available in Die packaging way. The Max Dual Supply Voltage of SIGC81T60SNCX1SA1 is 600V.