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AUIRL1404STRL

AUIRL1404STRL

AUIRL1404STRL

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

SOT-23

AUIRL1404STRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.3V 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 160A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 640A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 520 mJ
RoHS Status RoHS Compliant

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