IPB45N06S4L08ATMA1

new-10%

Manufacturer part number:IPB45N06S4L08ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB45N06S4L08ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	71W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.9m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	2.2V @ 35μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Rise Time	2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	45A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0079Ohm
Pulsed Drain Current-Max (IDM)	180A
Avalanche Energy Rating (Eas)	97 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead