Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	35W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	9.9nC @ 5V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	16A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.058Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	64A
Avalanche Energy Rating (Eas)	25 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free

AUIRLR024ZTRL

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