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BSP298 E6327

BSP298 E6327

BSP298 E6327

Infineon Technologies

MOSFET N-CH 400V 500MA SOT-223

SOT-23

BSP298 E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 255
[email protected] Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 1.8W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.5A
Drain-source On Resistance-Max 3Ohm
Pulsed Drain Current-Max (IDM) 2A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 130 mJ
RoHS Status Non-RoHS Compliant

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