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BAR 50-02L E6327

BAR 50-02L E6327

BAR 50-02L E6327

Infineon Technologies

BAR 50-02L E6327 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available on our website

SOT-23

BAR 50-02L E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SOD-882
Surface Mount YES
Diode Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature LOW DISTORTION
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAR50
JESD-30 Code R-XBCC-N2
Number of Elements 1
Power Dissipation-Max 250mW
Diode Type PIN - Single
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.4pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Frequency Band HIGH FREQUENCY TO C B
Resistance @ If, F 4.5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.5pF
Minority Carrier Lifetime-Nom 1.1 µs
RoHS Status RoHS Compliant
BAR 50-02L E6327 Product Details

BAR 50-02L E6327 Overview


The device is designed to operate from a maximal current of 100mA volts.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.

BAR 50-02L E6327 Features


from a maximum current of 100mA volts

BAR 50-02L E6327 Applications


There are a lot of Infineon Technologies BAR 50-02L E6327 applications of RF diodes.

  • Bandswitch for TV tuners
  • Wearables
  • Laptop and desktop PCs
  • Car radio
  • RF attenuators and switches
  • Phase detection
  • Sensor interfaces of security systems
  • Two elements in series configuration in a small-sized plastic SMD package
  • Sampling circuits
  • (SAT) TV

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