BAR 50-02L E6327 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available on our website
SOT-23
BAR 50-02L E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
SOD-882
Surface Mount
YES
Diode Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Additional Feature
LOW DISTORTION
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAR50
JESD-30 Code
R-XBCC-N2
Number of Elements
1
Power Dissipation-Max
250mW
Diode Type
PIN - Single
Application
ATTENUATOR; SWITCHING
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 5V 1MHz
Voltage - Peak Reverse (Max)
50V
Frequency Band
HIGH FREQUENCY TO C B
Resistance @ If, F
4.5Ohm @ 10mA 100MHz
Diode Capacitance-Max
0.5pF
Minority Carrier Lifetime-Nom
1.1 µs
RoHS Status
RoHS Compliant
BAR 50-02L E6327 Product Details
BAR 50-02L E6327 Overview
The device is designed to operate from a maximal current of 100mA volts.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.
BAR 50-02L E6327 Features
from a maximum current of 100mA volts
BAR 50-02L E6327 Applications
There are a lot of Infineon Technologies BAR 50-02L E6327 applications of RF diodes.
Bandswitch for TV tuners
Wearables
Laptop and desktop PCs
Car radio
RF attenuators and switches
Phase detection
Sensor interfaces of security systems
Two elements in series configuration in a small-sized plastic SMD package