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BC 808-25W H6327

BC 808-25W H6327

BC 808-25W H6327

Infineon Technologies

BC 808-25W H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 808-25W H6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BC808
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
BC 808-25W H6327 Product Details

BC 808-25W H6327 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Parts of this part have transition frequencies of 200MHz.Collector Emitter Breakdown occurs at 25VV - Maximum voltage.

BC 808-25W H6327 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz

BC 808-25W H6327 Applications


There are a lot of Infineon Technologies BC 808-25W H6327 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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