2SB1189T100Q Overview

This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A -700mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -700mA for this device.A transition frequency of 100MHz is present in the part.Breakdown input voltage is 80V volts.When collector current reaches its maximum, it can reach 700mA volts.

2SB1189T100Q Features

the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -700mA
a transition frequency of 100MHz

2SB1189T100Q Applications

There are a lot of ROHM Semiconductor 2SB1189T100Q applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting