BC 846A E6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC 846A E6433 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC846
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
330mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
Power Dissipation-Max (Abs)
0.33W
RoHS Status
RoHS Compliant
BC 846A E6433 Product Details
BC 846A E6433 Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 250MHz in the part.Single BJT transistor shows a 65V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC 846A E6433 Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 250MHz
BC 846A E6433 Applications
There are a lot of Infineon Technologies BC 846A E6433 applications of single BJT transistors.