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KSC5021RTU

  • KSC5021RTU
  • KSC5021RTU

KSC5021RTU

KSC5021RTU

ON Semiconductor

KSC5021RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC5021RTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 50W
Frequency 18MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Transistor Application SWITCHING
Gain Bandwidth Product 18MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Collector Emitter Breakdown Voltage 500V
Transition Frequency 18MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 800V
Emitter Base Voltage (VEBO) 7V
hFE Min 15
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.887440 $5.88744
10 $5.554189 $55.54189
100 $5.239801 $523.9801
500 $4.943208 $2471.604
1000 $4.663404 $4663.404
KSC5021RTU Product Details

KSC5021RTU Overview


In this device, the DC current gain is 15 @ 600mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Parts of this part have transition frequencies of 18MHz.A maximum collector current of 5A volts is possible.

KSC5021RTU Features


the DC current gain for this device is 15 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 18MHz

KSC5021RTU Applications


There are a lot of ON Semiconductor KSC5021RTU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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