BC 856A E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC 856A E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC856
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
330mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
Power Dissipation-Max (Abs)
0.33W
RoHS Status
RoHS Compliant
BC 856A E6327 Product Details
BC 856A E6327 Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BC 856A E6327 Features
the DC current gain for this device is 125 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA a transition frequency of 250MHz
BC 856A E6327 Applications
There are a lot of Infineon Technologies BC 856A E6327 applications of single BJT transistors.