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BC 857BF E6327

BC 857BF E6327

BC 857BF E6327

Infineon Technologies

BC 857BF E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 857BF E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Reach Compliance Code unknown
Base Part Number BC857
Configuration Single
Power - Max 250mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.25W
RoHS Status RoHS Compliant
BC 857BF E6327 Product Details

BC 857BF E6327 Overview


In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.This device displays a 45V maximum voltage - Collector Emitter Breakdown.

BC 857BF E6327 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC 857BF E6327 Applications


There are a lot of Infineon Technologies BC 857BF E6327 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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