BC817K40WE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC817K40WE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BC817
Reference Standard
AEC-Q101
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
170MHz
Frequency - Transition
170MHz
Collector Base Voltage (VCBO)
50V
RoHS Status
RoHS Compliant
BC817K40WE6327HTSA1 Product Details
BC817K40WE6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.In the part, the transition frequency is 170MHz.Maximum collector currents can be below 500mA volts.
BC817K40WE6327HTSA1 Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA a transition frequency of 170MHz
BC817K40WE6327HTSA1 Applications
There are a lot of Infineon Technologies BC817K40WE6327HTSA1 applications of single BJT transistors.