MJ14001G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 50A 3V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 12A, 60A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -60A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Collector current can be as low as 60A volts at its maximum.
MJ14001G Features
the DC current gain for this device is 15 @ 50A 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 12A, 60A
the emitter base voltage is kept at 5V
the current rating of this device is -60A
MJ14001G Applications
There are a lot of ON Semiconductor MJ14001G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
