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BC847BWE6327BTSA1

BC847BWE6327BTSA1

BC847BWE6327BTSA1

Infineon Technologies

BC847BWE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC847BWE6327BTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC847
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
BC847BWE6327BTSA1 Product Details

BC847BWE6327BTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device exhibits a collector-emitter breakdown at 45V.

BC847BWE6327BTSA1 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

BC847BWE6327BTSA1 Applications


There are a lot of Infineon Technologies BC847BWE6327BTSA1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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