BUL146F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BUL146F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2009
Series
SWITCHMODE™
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
8A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BUL146
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
14MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
700mV @ 600mA, 3A
Collector Emitter Breakdown Voltage
400V
Current - Collector (Ic) (Max)
6A
Transition Frequency
14MHz
Collector Emitter Saturation Voltage
930mV
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
14
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.349376
$0.349376
10
$0.329600
$3.296
100
$0.310943
$31.0943
500
$0.293343
$146.6715
1000
$0.276739
$276.739
BUL146F Product Details
BUL146F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 500mA 5V.A collector emitter saturation voltage of 930mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 600mA, 3A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BUL146F Features
the DC current gain for this device is 14 @ 500mA 5V a collector emitter saturation voltage of 930mV the vce saturation(Max) is 700mV @ 600mA, 3A the emitter base voltage is kept at 9V the current rating of this device is 8A a transition frequency of 14MHz
BUL146F Applications
There are a lot of ON Semiconductor BUL146F applications of single BJT transistors.